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Product details
DFBandDBR laser
High power 1550nm DFB laser
Main features:
- Wavelength of ITU grid
- Output power can reach 100mW
- Low RIN
- Polarization maintaining or SMF28 fiber optic
- Laser welded and sealed
- Built in thermistor and monitoring detector
- Optional Bias-T
Application:
- Analog RF Links
- Seeding
- Pulsing
- Sensing
- CATV
Optoelectronic characteristics:
TOP=25°C, continous wave and beginning of life unless otherwise specified.
|
Parameter |
Sym. |
Condition |
Min |
Typ. |
Max |
Unit |
|
Working chip temperature |
TCHIP |
|
20 |
|
35 |
°C |
|
threshold current |
ITH |
|
|
50 |
|
mA |
|
Laser driving current |
IOP |
|
|
375 |
500 |
mA |
|
Laser forward voltage |
VF |
I= IMAX |
|
|
3 |
V |
|
output power |
POP |
100mW Version, I=IOP |
100 |
|
|
mW |
|
80mW Version, I=IOP |
80 |
|
|
|||
|
63mW Version, I=IOP |
63 |
|
|
|||
|
50mW Version, I=IOP |
50 |
|
|
|||
|
40mW Version, I=IOP |
40 |
|
|
|||
|
center frequency |
FOPT |
P=POP |
See ordering information |
THz |
||
|
line width |
Δν |
|
|
1 |
|
MHz |
|
relative intensity noise |
RIN |
P=POP, 0.2GHz→14GHz |
|
|
-150 |
dB/Hz |
|
Side Mode Suppression Ratio |
SMSR |
P=POP |
30 |
|
|
dB |
|
optical isolation |
ISO |
|
30 |
35 |
|
dB |
|
extinction ratio |
PER |
|
17 |
21 |
|
dB |
|
Monitor the current of the photodiode |
IPD |
|
100 |
|
|
µA |
|
Monitor the dark current of photodiodes |
ID |
|
|
|
100 |
nA |
|
Tracking Error |
|
|
-0.5 |
|
0.5 |
dB |
|
TEC current |
|
TOP=70°C, P=POP, TCHIP=25°C |
|
|
4.0 |
A |
|
TEC voltage |
|
TOP=70°C, P=POP, TCHIP=25°C |
|
|
4.0 |
V |
|
Thermistor impedance |
RTH |
T=25°C |
9500 |
10000 |
10500 |
Ω |
|
Thermistor beta coefficient |
β |
0 / 50°C |
|
3892 |
|
|
High bandwidth DFB laser
Main features:
- The output power can reach 18 mW
- High bandwidth>10 GHz
- Ultra high speed pulse performance
- Laser welding and sealing
- Built in thermistor and monitoring detector
Optoelectronic characteristics:
TOP=25°C, continous wave and beginning of life unless otherwise specified.
|
Parameter |
Sym. |
Condition |
Min |
Typ. |
Max |
Unit |
|
Working chip temperature |
TCHIP |
|
15 |
|
35 |
°C |
|
threshold current |
ITH |
|
8 |
|
20 |
mA |
|
Laser driving current |
IOP |
|
|
75 |
100 |
mA |
|
Laser forward voltage |
VF |
I= IMAX |
|
1.6 |
2 |
V |
|
output power |
POP |
I=IOP |
18 |
|
|
mW |
|
Center wavelength |
λ |
P=POP |
|
1310 |
|
nm |
|
line width |
Δ ν |
|
|
1 |
|
MHz |
|
relative intensity noise |
RIN |
P=POP, 0.2GHz→3GHz |
|
|
-150 |
dB/Hz |
|
Side Mode Suppression Ratio |
SMSR |
P=POP |
30 |
|
|
dB |
|
optical isolation |
ISO |
|
30 |
35 |
|
dB |
|
extinction ratio |
PER |
|
17 |
19 |
|
dB |
|
Monitor the current of the photodiode |
IPD |
|
50 |
|
|
µA |
|
Monitor the dark current of photodiodes |
ID |
|
|
|
100 |
nA |
|
Tracking Error |
|
|
-0.5 |
|
0.5 |
dB |
|
TEC current |
|
TOP=70°C, P=POP, TCHIP=25°C |
|
|
2.0 |
A |
|
TEC voltage |
|
TOP=70°C, P=POP, TCHIP=25°C |
|
|
2.5 |
V |
|
Thermistor impedance |
RTH |
T=25°C |
9500 |
10000 |
10500 |
Ω |
|
Thermistor beta coefficient |
β |
0 / 50°C |
|
3892 |
|
|
1064nm DBR laser
Main features:
- The output power can reach 150 mW
- Fast pulse performance
- Polarization maintaining or SMF28 fiber optic
- Laser welding and sealing
- Built in TEC and monitoring detector
Application:
- Master oscillator for MOPA
- Seeder for fiber lasers
- Seeder for DPSS lasers
Optoelectronic characteristics:
TOP=25°C, continous wave and beginning of life unless otherwise specified.
|
Parameter |
Sym. |
Condition |
Min |
Typ. |
Max |
Unit |
|
Working chip temperature |
TCHIP |
|
15 |
|
35 |
°C |
|
threshold current |
ITH |
|
|
40 |
50 |
mA |
|
Laser driving current |
IOP |
|
|
500 |
550 |
mA |
|
Laser forward voltage |
VF |
I= IMAX |
|
2.0 |
2.5 |
V |
|
output power |
POP |
I=IOP |
|
150 |
|
mW |
|
Center wavelength |
λ |
P=POP |
1062 |
1064 |
1066 |
nm |
|
line width |
Δ ν |
|
|
8 |
10 |
MHz |
|
Side Mode Suppression Ratio |
SMSR |
P=POP |
-30 |
|
|
dB |
|
extinction ratio |
PER |
|
14 |
19 |
|
dB |
|
Monitor the current of the photodiode |
IPD |
P=POP |
50 |
|
|
µA |
|
Monitor the dark current of photodiodes |
ID |
|
|
|
100 |
nA |
|
TEC current |
|
ΔT=25°C, P=POP |
|
|
3.5 |
A |
|
TEC voltage |
|
ΔT=25°C, P=POP |
|
|
3.5 |
V |
|
Thermistor impedance |
RTH |
T=25°C |
9500 |
10000 |
10500 |
Ω |
|
Thermistor beta coefficient |
β |
0 / 50°C |
|
3892 |
|
|
1064 nm high-power DFB Laser
Main features:
- The output power can reach 50mW
- polarization-maintaining fiber
- seal
- Built in optical isolator, TEC， Thermistors and monitoring detectors
- Optional Bias Tee
Application:
- Master Oscillator
- Pulsing
- Sensing
- Defense
- Mode-hop free tuning
Optoelectronic characteristics:
TOP=25°C, continous wave and beginning of life unless otherwise specified.
|
Parameter |
Sym. |
Condition |
Min |
Typ. |
Max |
Unit |
|
Working chip temperature |
TCHIP |
|
20 |
|
40 |
°C |
|
threshold current |
ITH |
|
|
17 |
|
mA |
|
Laser driving current |
IOP |
|
|
|
400 |
mA |
|
Laser forward voltage |
VF |
I= IMAX |
|
|
3 |
V |
|
output power |
POP |
I=IOP |
50 |
|
|
mW |
|
Center wavelength |
λ |
P=POP |
1062 |
1064 |
1066 |
nm |
|
line width |
Δ ν |
|
|
|
0.1 |
nm |
|
Side Mode Suppression Ratio |
SMSR |
P=POP |
40 |
|
|
dB |
|
extinction ratio |
PER |
|
17 |
21 |
|
dB |
|
Monitor the current of the photodiode |
IPD |
P=POP |
100 |
|
|
µA |
|
Monitor the dark current of photodiodes |
ID |
|
|
|
100 |
nA |
|
TEC current |
|
ΔT=25°C, P=POP |
|
|
3 |
A |
|
TEC voltage |
|
ΔT=25°C, P=POP |
|
|
3 |
V |
|
Thermistor impedance |
RTH |
T=25°C |
9500 |
10000 |
10500 |
Ω |
|
Thermistor beta coefficient |
β |
0 / 50°C |
|
3892 |
|
|
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