1x12, 288 linear array phase type
1x12, The 288 line array phase type liquid crystal modulator is an ideal device for beam and printing systems. This device utilizes standard liquid crystal technology based on technology. The array based on CMOS structure provides an effective tool for achieving high-resolution lithography technology. Due to its smaller pixel size, it can provide a larger deflection angle for beam deflection applications. In addition, the circuits on the COMS chip greatly simplify the processes of addressing, random access redirection, and arbitrary control. Another advantage of using CMOS arrays is that they have already achieved economies of scale in semiconductor manufacturing.
When filled with Zero Twist Nematic (ZTN) liquid crystal, the device can be used as a fully programmed one-dimensional diffraction beam deflection array. By downloading a variable order phase profile on the array, non mechanical beam deflection can be achieved, which is equivalent to a programmable diffraction phase. The main advantages of liquid crystal beam deflectors are no mechanical movement (hence no beam pointing deviation and instability issues), random access pointing, sufficient aperture size, lightweight optical head, and the possibility of large-scale manufacturing to achieve low cost.
characteristic |
application |
high optic efficiency |
beam deflection |
No mechanical movement |
diffractive optics |
Safe low voltage operation |
Spectral tuning and processing |
High speed phase control |
ultrafast |
All user programming |
Programmable phase grating |
Flexible system configuration |
Programmable amplitude grating |
Quiet and low vibration operation |
|
All solid state device structure |
|
Plug and play easy installation |
|
Friendly graphical interface |
Model P12,288 – λ (nm) – PT |
|
Array Size |
19.66x19.66mm |
Design Wavelength (nominal) |
635-1550nm (Specify wavelength, λ in nm when ordering) |
Diffraction Efficiency (zero-order) |
80 - 95% (maximum) |
Duty Cycle |
Up to 100% |
External Window |
Broadband antireflection coated for Ravg<1% (over='' 450-865nm='' or=''>1%> |
Fill Factor |
100% |
Format |
1x12,288 |
Mode |
Reflective |
Steering Angle |
± 4 - 7° |
Modulation |
Controllable index of refraction |
Phase Levels (resolvable) |
50 -100 linear levels (minimum) for 2π phase stroke |
Phase Stroke (double-pass) |
Typically 2π at user-specified laser line |
Pixel Pitch |
1.6 μm |
Reflected Wavefront Distortion (rms) |
λ/10 – λ |
Response Time |
5 - 30 ms |
Spatial Resolution |
TBD |
Switching Frequency |
30 – 200 Hz |
If you need detailed information, please contact us!